Measurement of Magnetoresistance for Semiconductors

The Magnetoresistance Experiment is designed to study the change in resistance of a sample when an external magnetic field is applied. The phenomenon of magnetoresistance occurs because the drift velocities of all charge carriers are not the same.

When the magnetic field is applied, the Hall voltage compensates for the Lorentz force acting on carriers with average velocity. Slower carriers are overcompensated, while faster carriers are undercompensated, resulting in trajectories that are not aligned with the applied field. This causes an effective decrease in the mean free path and an increase in resistivity.

Physics Lab Experiments Setup from Atico Exports.

Electromagnet :

• 7.5 KG

Power Supply :

• Constant Current Power Supply

Digital Gauss Meter :

• 20 KG

• Four-Probe Arrangement
• Ge P-Type Sample
• Magnetoresistance Setup