Static and Dynamic Characteristics of IGBT & MOSFET

The Static and Dynamic Characteristics of IGBT & MOSFET is designed for practical study of power transistor switching and pulse width modulation techniques. It provides a suitable platform for understanding PWM pulse generation, voltage control, frequency control, and power transistor operation through hands-on experimentation. The trainer includes a power transistor, PWM pulse generator circuit, potentiometer-based voltage and frequency control, digital meters, and load resistors for practical circuit studies. Designed and manufactured by Atico Export to meet the practical demands of modern laboratories.

Digital Meters:

• Voltmeter: 20 V DC.
• Ammeter: 200 mA DC.
• Voltmeter: 200 V DC.

Power Supplies:

• DC supply: Regulated 0–10 V DC, 150 mA.
• DC supply: Regulated 0–30 V DC, 150 mA.
• Mains operated: 230 V, 50 Hz ±10%.

Components Mounted on Panel:

• Power transistor 2N3055.
• Voltage control through potentiometer.
• PWM pulse generator circuit.
• Frequency control through potentiometer.
• PWM control through potentiometer.
• Resistors for load.

• Protective cover.
• Front panel with high-class insulated printed circuit board featuring clearly printed circuits and symbols.
• Fuse protection against short-circuit conditions.
• Instruction manual.
• Connections through 2 mm coloured sockets.
• 2 mm patch cords.
• Housed in an ABS plastic cabinet.
• Trainer size: 12 × 8 inches.