EXPERIMENT: RESISTIVITY VARIATION WITH TEMPERATURE FOR A SEMICONDUCTOR SAMPLE AND DETERMINATION OF ITS ENERGY GAP
EXPERIMENT SETUP CONSISTS OF:
- Resistivity of Semiconductor by Four-Probe Kit
- Voltmeter: 0–2000 mV, resolution: 1 mV
- Ammeter: 0–20 mA, resolution: 0.01 mA
- Source: Built-in constant current source with variable output current setting
- Internally connected voltmeter and current meter
- Rated Input: 220 V / 50 Hz or 110 V / 60 Hz
- Power Consumption: <200 W
- Digital Thermostat: Resolution: 0.1 °C, maximum temperature: 110 °C
- Set Temperature: Within ±1 °C
FOUR-PROBE ARRANGEMENT:
- Crystal: Mounted on heating element and electrically insulated
- Sample: Germanium, size: 10 mm Ă— 5 mm Ă— 0.5 mm
- Pitch of Each Probe: 2 mm
- Heater: 100 W
Designed and manufactured by Atico Export to meet the practical demands of modern laboratories.
