UJT / JFET Characteristics

EXPERIMENT: FOR JFET – DRAIN CURVES & TRANSCONDUCTANCE CURVES, DETERMINATION OF Gₘₒ, Iᴅₛₛ, Vₚ. VARIATION OF DRAIN-SOURCE RESISTANCE WITH GATE VOLTAGE & VARIATION OF TRANSCONDUCTANCE WITH GATE VOLTAGE

EXPERIMENT: FOR UJT – I-V CHARACTERISTICS, DETERMINATION OF INTRINSIC STAND-OFF RATIO, BASE-TO-BASE RESISTANCE, VALLEY POINT & PEAK POINT VOLTAGES

EXPERIMENT SETUP CONSISTS OF:

• JFET / UJT Characteristics Kit – With dual variable regulated power supplies, digital voltmeter and digital milliammeter
• JFET / UJT Module

Designed and manufactured by Atico Export to meet the practical demands of modern laboratories.